RF / Wireless Development Engineer
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer.
As the world leader in secure connectivity solutions for embedded applications, we are driving innovation in the secure connected vehicle, end-
to-end security & privacy and smart connected solutions markets.
Develop discrete and integrated power transistors in package up to millimeter wave band for cellular, emerging, and RF power markets based on LDMOS, GaN, SiGe and GaAs technology.
Involves electromagnetic simulation, modeling and low impedance transistor internal and external matching networks, passive components and substrate simulation and layout.
Design integrated passives, wire bonds, MOSCAPs, packaging interfaces and PCB board level matching. The design process uses a combination of measurement based techniques (e.
g. loadpull and S parameter data, etc) and CAD software with the use of linear or non-linear models and design kits. Make use of Agilent’s ADS, Momentum, FEM, 3D and planar electromagnetic simulation tools.
Work closely with global device&package engineers, product engineers, project managers, modeling engineers, application engineers and manufacturing personnel for successful and timely product introduction, and report to local management team.
Master or above degree in RF, millimeter wave Engineering or relevant disciplines.Good knowledge on RF or millimeter wave power transistors.
Experience in GaN and SiGe product development is preferred. Good knowledge on Agilent's Advanced Design System (ADS) and HFSS.
Strong communication skills and ability to work with global teams. Good language skill in English.