NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer.
As the world leader in secure connectivity solutions for embedded applications, we are driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets.
NXP RF Power Solutions Business Unit is the global leader for RF power semiconductor solutions for the wireless infrastructure equipment market.
The division designs high-power RF LDMOS, GaN and SiGe power transistors, IC and modules for infrastructure applications, mobile and ISM (industrial scientific and medical) markets.
Scope of Responsibilities / Expectations
Develop discrete and integrated power transistors and SIP up to 6GHz for cellular, emerging, small signal and RF power markets based on LDMOS, GaN and GaAs technology.
Involves electromagnetic simulation, modeling and low impedance transistor internal and external matching networks, passive components and substrate simulation and layout.
Design integrated passives, wire bonds, MOSCAPs, packaging interfaces and PCB board level matching. The design process uses a combination of measurement based techniques (e.
g. loadpull and S parameter data, etc) and CAD software with the use of linear or non-linear models and design kits. Make use of Agilent’s ADS, Momentum, FEM, 3D and planar electromagnetic simulation tools.
Work closely with global device&package engineers, product engineers, project managers, modeling engineers, application engineers and manufacturing personnel for successful and timely product introduction, and report to local management team.
Specific knowledge / skills
Candidate needs to hold a Bachelor or above degree in electrical engineering. Direct experience in designing RF power transistor internal-matching networks using LDMOS / GaN, and direct experience working with RF power products at the RF system level is preferred.
The applicant must have a strong background on microwave and RF engineering, and emphasis on one or several of the following areas is highly desirable :
Above 2 years work experience in RF power transistor and circuit design